Here's the top view of an indium gallium arsenide (InGaAs) transistor fabricated at MIT. InGaAs is a material in which electrons travel many times faster than in silicon. MIT's Microsystems Technology Laboratories recently demonstrated InGaAs-fabricated transistors that can carry 2.5 times more current than the latest silicon devices. The transistor was only 60 nanometers, or billionths of a meter long.
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